Ms. Xiaodan Li | Electronic Package | Best Researcher Award

Assistant Researcher at Institute of Engineering Electronics China Academy of Engineering Physics, China

Li Xiaodan is a dedicated researcher in the field of microelectronics and solid-state electronics, known for her contributions to next-generation memory technologies and advanced packaging techniques. Born on November 2, 1995, in Nanning, Guangxi, China, she has demonstrated a strong commitment to scientific exploration from an early age. She completed her Bachelor’s degree in Material Physics at Nanjing University of Science and Technology, followed by a Joint Master-PhD program at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. Her expertise lies in wafer-level packaging, TSV (Through-Silicon Via) technology, and ovonic threshold switching devices. She has a proven track record of excellence in both academic research and practical engineering. Currently serving as an Assistant Researcher at the Institute of Electronic Engineering, China Academy of Engineering Physics, Li Xiaodan is actively contributing to high-impact national R&D programs. Her research has been published in reputable SCI-indexed journals and has earned her several awards, including the National Encouragement Scholarship and Outstanding Student honors from the Chinese Academy of Sciences. A driven professional with a vision to innovate, she continues to push the frontiers of materials science and microelectronic device engineering.

Education

Li Xiaodan has cultivated a robust educational foundation in engineering and applied physics through her academic journey at two of China’s premier institutions. She commenced her higher education in 2015 at Nanjing University of Science and Technology, where she earned a Bachelor of Engineering in Material Physics. During her undergraduate years, she developed a strong interest in micro- and nano-electronic materials, laying the groundwork for her future specialization. In 2019, she was admitted to the prestigious Shanghai Institute of Microsystem and Information Technology, part of the Chinese Academy of Sciences, for a Joint Master-PhD program in Microelectronics and Solid-State Electronics. This elite program emphasized cutting-edge research in semiconductor device development and integration. Throughout her doctoral studies, she participated in multiple national key R&D projects, gaining in-depth knowledge and hands-on experience in amorphous materials, electrical testing, device failure analysis, and thin-film deposition. Her academic career reflects a balance of theoretical understanding and practical implementation, essential for advancing microelectronics research. She is expected to receive her PhD in July 2024, equipped with the knowledge and skills to lead innovative research in integrated circuits and next-generation memory technologies.

Professional Experience

Li Xiaodan has consistently translated her academic expertise into impactful professional roles. As of July 2024, she began her career as an Assistant Researcher at the Institute of Electronic Engineering, China Academy of Engineering Physics. In this role, she engages in high-level scientific research and contributes to national strategic programs in electronics. Her professional experience is marked by extensive involvement in research and development of wafer-level packaging processes and TSV (Through-Silicon Via) electroplating mechanisms. She has played a critical role in solving complex engineering challenges, particularly in the domain of failure analysis and interface optimization in semiconductor devices. During her academic tenure, she served as a key research member on two major National Key R&D Programs, where she led efforts in device fabrication, electrical performance characterization, and structural diagnostics. These experiences have honed her ability to integrate CMOS technology with emerging memory devices and selectors. With a combination of research excellence and practical problem-solving capabilities, Li Xiaodan brings significant value to projects that demand rigorous innovation and technical precision. Her transition from academia to applied research represents her commitment to bridging theoretical insights with industrial and defense applications.

Research Interest

Li Xiaodan’s research interests are rooted in microelectronics, with a specific focus on emerging memory technologies, threshold switching devices, and wafer-level integration. She is particularly interested in ovonic threshold switching (OTS) materials used in selector devices, which are crucial components in high-density memory arrays. Her research addresses fundamental and applied aspects of selector design, including interface engineering, low-leakage performance, and electrical endurance. Another significant area of her interest is the study of amorphous materials and their physical properties, such as Urbach energy, which influence device performance and threshold voltage behavior. She also explores process optimization for TSV electroplating and failure mechanisms in advanced 3D IC packaging. A key feature of her research is the application of analytical tools like double-sided aberration-corrected TEM and FIB for microstructural analysis and failure diagnostics. Furthermore, she is passionate about integrating materials science with CMOS-compatible fabrication methods to enhance device scalability and reliability. Her vision is to develop low-power, high-endurance memory solutions and contribute to the technological evolution of data storage and neuromorphic computing systems. By bridging fundamental science and technological innovation, Li Xiaodan aims to play a leading role in the future of semiconductor research.

Research Skills

Li Xiaodan possesses a versatile and interdisciplinary set of research skills in materials science, microfabrication, and semiconductor electronics. She is proficient in thin-film deposition techniques such as magnetron sputtering, particularly for fabricating multi-layered selector devices. Her expertise includes photolithography and CMOS-compatible processing, crucial for fabricating bottom electrodes and nanoscale device structures. In electrical characterization, she has hands-on experience with semiconductor parameter analyzers for evaluating device performance metrics such as threshold voltage, leakage current, and endurance. Her knowledge extends to failure analysis techniques, utilizing focused ion beam (FIB) and double-sided aberration-corrected transmission electron microscopy (TEM) to investigate structural degradation and interface quality. She has worked extensively with amorphous materials, particularly chalcogenide glasses and carbon-based layers, to improve switching behaviors and reduce electrical stress. Additionally, she is skilled in interpreting Urbach energy data to understand material disorder and its correlation with device performance. Her scientific acumen is supported by her involvement in national-level R&D projects, where she contributed to experimental design, process optimization, and patent development. These combined skills make her well-equipped to tackle complex problems in next-generation memory technologies and integrated circuit reliability.

Awards and Honors

Li Xiaodan’s academic and research excellence has earned her numerous awards and honors throughout her educational and early professional journey. One of her most prestigious recognitions is the National Encouragement Scholarship, which is awarded to students demonstrating outstanding academic performance and research potential. During her postgraduate tenure at the Chinese Academy of Sciences, she was repeatedly honored with the title of Outstanding Student, a recognition of her leadership, academic contributions, and commitment to collaborative research. She also served as an Excellent Student Leader, showcasing her ability to guide and support her peers while managing demanding research schedules. These accolades reflect her balanced profile as both a high-achieving scholar and a proactive contributor to her academic community. Her honors affirm her capacity for independent research, collaborative teamwork, and scientific leadership. They also highlight her dedication to scientific advancement and her potential for future contributions to the field of electronics and materials science. As she embarks on her professional research career, these recognitions serve as testimony to her past achievements and as a strong foundation for future innovations.

Publications

Li Xiaodan has authored several high-impact scientific publications in the field of microelectronics and materials science. Her research has been featured in internationally recognized SCI journals, reflecting both the originality and the technical depth of her work. Key publications include:

• Xiaodan Li et al. (2023). Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (~0.4 nA) and Low Drift Characteristics. ACS Applied Electronic Materials.

• Xiaodan Li et al. (2021). Extended Endurance Performance and Reduced Threshold Voltage by Doping Si in GeSe-based Ovonic Threshold Switching Selectors. Thin Solid Films, Vol. 734.

• Xiaodan Li et al. (2023). Disclosing the Basis of the Ratio of the Firing Voltage to the Threshold Voltage in Ovonic Threshold Switching Selectors: Urbach Energy. Journal of Materials Science: Materials in Electronics. DOI: 10.1007/s10854-023-11254-4.

These works explore selector devices, amorphous material interfaces, electrical performance, and fundamental switching physics. In addition, she has applied for a patent titled “A Threshold Switching Material Device with Low Threshold Voltage Drift” as the first inventor, reflecting her innovative contributions to device engineering. Her publications collectively showcase a blend of experimental rigor and theoretical insight.

Conclusion

Li Xiaodan is an accomplished early-career researcher poised for impactful contributions in microelectronics and materials engineering. With a strong academic background, rigorous research training, and practical experience in cutting-edge device technologies, she exemplifies the new generation of scientists driving advancements in memory technology and integrated systems. Her work spans from fundamental investigations of material disorder to real-world applications in device fabrication and reliability testing. Through national R&D initiatives and peer-reviewed publications, she has demonstrated her ability to lead and innovate within interdisciplinary teams. Her proficiency in process development, failure analysis, and electrical diagnostics, coupled with leadership qualities recognized through awards and scholarships, positions her as a valuable asset to both academia and industry. As she begins her tenure as an Assistant Researcher at the Institute of Electronic Engineering, she is equipped with the vision, skills, and dedication needed to address complex challenges in semiconductor science. With a foundation built on both academic excellence and hands-on experience, Li Xiaodan’s career trajectory promises to be one marked by innovation, collaboration, and significant scientific contributions.